Non-plasma halogenated gas flow to prevent metal residues

Details Non-plasma halogenated gas flow to prevent metal residues Non-plasma halogenated gas flow to prevent metal residues

1997-10-02

2000-06-06

Krynski, William

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

156345, 118725, 216 37, B08B 312

Patent

active

06070599&

ABSTRACT:
An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

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