Non-plasma cleaning method for semiconductor manufacturing appar

Cleaning and liquid contact with solids – Processes – Including work heating or contact with combustion products

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134 1, 134 21, 134 221, B08B 700

Patent

active

054219027

ABSTRACT:
When removing a laminar deposit existing in a thin film forming operational system of a semiconductor manufacturing apparatus, a mixture gas prepared by mixing nitrogen trifluoride gas with a fluoric gas is introduced into the thin film forming operational system so as to be brought into contact in a non-plasma state with the laminar deposit.

REFERENCES:
patent: 4581101 (1986-04-01), Senoue et al.

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