Non-planar III-nitride power device having a lateral...

Details Non-planar III-nitride power device having a lateral... Non-planar III-nitride power device having a lateral...

2005-09-22

2008-08-26

Baumeister, Bradley W. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257SE21403

Reexamination Certificate

active

07417267

ABSTRACT:
A III-nitride power semiconductor device that includes a heterojunction body with a sloping portion, a first power electrode, a second power electrode and a gate over the sloping portion of the heterojunction to control the conduction of current between the first power electrode and the second power electrode of the HI-nitride power semiconductor device.

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M.A Kahn et al. “Recent Advances in III-V Nitride Electron Devices,” Electron Devices Meeting, 1996., International, Dec. 8-11, 1996, San Francisco, CA, U.S.A.

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