Non-mass-analyzed ion implantation

Details Non-mass-analyzed ion implantation Non-mass-analyzed ion implantation

1983-03-21

1985-08-06

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

G01N 2300

Patent

active

045338310

ABSTRACT:
A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scanned under the application of a magnetic field so as to be implanted into a target at a distribution profile which varies with the species of ions. An ion implantation apparatus can be simplified. A large ion beam current with a large spot size can be used and ions can be implanted to the target at a large dose within a short time. Especially, the non-mass-analyzed ion implantation is advantageously utilized for production of solar batteries.

REFERENCES:
patent: 3689766 (1972-09-01), Freeman
patent: 4013891 (1977-03-01), Ko et al.
patent: 4316090 (1982-02-01), Sakudo et al.
patent: 4449051 (1984-05-01), Berkowitz

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