Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-01-31
1999-12-21
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257294, 257298, 257306, 257307, 257308, 257528, 257533, 257535, 349 49, 349 50, 349 51, 438396, 438551, 438553, G02F 11343
Patent
active
060052600
ABSTRACT:
For contacting a non-linear switching element (10), for example for use in a display device (1), a metallic layer (14) is provided on a layer of non-linear resistive material by means of a low-energetic deposition technique. This layer may function as a contact but also as a protective layer when a contact metallization (15) is provided at a later stage.
REFERENCES:
patent: 5366588 (1994-11-01), Scholten et al.
patent: 5521731 (1996-05-01), Fukuyama et al.
patent: 5674599 (1997-10-01), Yamada
Kuntzel Jan H. W.
Van Roosmalen Alfred J.
Abraham Fetsum
Fox John C.
U.S. Philips Corporation
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