Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-03-27
1993-07-06
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 25, 257 22, 257 23, 372 45, 372 46, 359248, H01L 2714
Patent
active
052256928
ABSTRACT:
A non-linear semiconductor optical device comprises a first quantum well layer having discrete quantum levels of carriers including a first quantum level for electrons and a second quantum level for holes with an energy gap corresponding to a wavelength of an incident optical beam; a pair of barrier layers provided above and below the first quantum well layer in contact therewith with a thickness that allows a tunneling of the carriers therethrough for defining a potential well in correspondence to the first quantum well layer; and a second quantum well layer provided in contact with the barrier layers for accepting the carriers that have been created in the first quantum well layer upon excitation by the incident optical beam and escaped therefrom by tunneling through the barrier layer. The second quantum well layer comprises a material that has a conduction band including therein a .GAMMA. valley and an X valley, wherein said .GAMMA. valley is located at an energy level substantially higher than the first quantum level while said X valley is located at an energy level substantially lower than the first quantum level.
REFERENCES:
patent: 4665412 (1987-05-01), Ohkawa et al.
patent: 4720309 (1988-01-01), Deveaud et al.
patent: 4819036 (1989-04-01), Kuroda et al.
patent: 5023879 (1991-06-01), Wang et al.
patent: 5113231 (1992-05-01), Soderstrom
patent: 5136345 (1992-08-01), Kasahara
Feldman et al., "Experimental study of the .GAMMA.-X electron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structures," Physical Review B, vol. 42, No. 9, Sep., 1990, New York, N.Y., pp. 5809-5821.
Ishikawa Hideaki
Muto Shun-ichi
Takeuchi Atsushi
Fujitsu Limited
Mintel William
LandOfFree
Non-linear quantum semiconductor optical device having a signal- does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-linear quantum semiconductor optical device having a signal-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-linear quantum semiconductor optical device having a signal- will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1692047