Non-linear quantum dot optical device

Details Non-linear quantum dot optical device Non-linear quantum dot optical device

1992-12-01

1994-03-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 20, 257 21, 257 24, 257184, 359248, H01L 2714

Patent

active

052910342

ABSTRACT:
A non-linear optical device utilizes laterally asymmetrical quantum dot structures (D1-D5) that are tunable in terms of their lateral asymmetry by bias potentials (V1, V2) applied to laterally extending electrode structures (13, 14).

REFERENCES:
patent: 4751194 (1988-06-01), Cibert et al.
patent: 4880297 (1989-11-01), Fejer et al.
patent: 5012304 (1991-04-01), Kash et al.
patent: 5170226 (1992-12-01), Fukuzawa et al.
Temkin et al., "Low-Temperature Photoluminescence From InGaAs/InP Quantum Wires and Boxes," Appl. Phys. Lett. 50(7), Feb. 16, 1987, pp. 413-415.
Khurgin, "Novel Configuration of Self-Electro-Optic Effect Device Based on Asymmetric Quantum Wells", Appl. Phys. Lett. 53(9), Aug. 29, 1988, pp. 779-781.

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