Non-linear optical thin film layer system

Details Non-linear optical thin film layer system Non-linear optical thin film layer system

1998-03-30

1999-11-30

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117 97, 117106, 117 92, 428700, 428701, 428702, 428446, 257613, B23B 900

Patent

active

059935448

ABSTRACT:
A non-linear optical thin film layer system (10) is provided for integrated optics applications where a non-linear optical thin film layer (18) is integrated with a gallium-arsenide substrate (12). A first encapsulating layer (20) is deposited on lower surface (26), peripheral sides (30), and an upper surface peripheral region (28) of said gallium-arsenide substrate (12). A second encapsulating and buffer layer (14) is epitaxially grown on an upper surface of said gallium-arsenide substrate (12) and on the encapsulated upper surface peripheral region (28) of said gallium-arsenide substrate (12). A perovskite layer (16) is epitaxially grown on an upper surface of the layer (14). A non-linear optical thin film layer (18) is epitaxially grown on an upper surface of the perovskite layer (16) and is lattice matched to this layer.

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