Non-kogating, low turn on energy thin film structure for very lo

Incremental printing of symbolic information – Ink jet – Ejector mechanism

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

347 62, B41J 205

Patent

active

061262773

ABSTRACT:
An ink jet printhead structure having a silicon carbide layer, an ink barrier layer disposed on the silicon carbide layer and respective ink chambers formed in the ink barrier layer over respective thin film resistors and adjacent the silicon carbide passivation layer, each chamber formed by a chamber opening in the ink barrier layer and a portion of the silicon carbide layer such that a silicon carbide surface fully extends across an area enclosed by the chamber opening, whereby a silicon carbide surface fully extends across the ink chamber. The ink chambers are more particularly configured to emit ink drops in the range of about 2 to 4 picoliters.

REFERENCES:
patent: 4513298 (1985-04-01), Scheu
patent: 4675693 (1987-06-01), Yano
patent: 4719477 (1988-01-01), Hess
patent: 5198834 (1993-03-01), Childers
patent: 5278584 (1994-01-01), Keefe
patent: 5317346 (1994-05-01), Garcia
patent: 5469199 (1995-11-01), Allen
patent: 5912685 (1999-06-01), Raman
European Search Report (dated: Jul. 29, 1999) for EP 98 12 4756.
"Development Of The Thin-Film Structure For The ThinkJet Printhead," Bhaskar & Aden, Hewlett-Packard Journal, vol. 36, No. 5, May 1985, pp. 27-33.
"Development Of A High-Resolution Thermal Inkjet Printhead," Buskirk, Hackleman, Hall, Kanarek, Low, Trueba, & Van de Poll, Hewlett-Packard Journal, vol. 39, No. 5, Oct. 1988, pp. 55-61.
"The Third-Generation HP Thermal InkJet Printhead," Aden, Bohorquez, Collins, Crook, Garcia & Hess, Hewlett-Packard Journal, vol. 45, No. 1, Feb. 1994, pp. 41-45.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Non-kogating, low turn on energy thin film structure for very lo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-kogating, low turn on energy thin film structure for very lo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-kogating, low turn on energy thin film structure for very lo will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-188212

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.