Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-08-26
1987-03-10
Ozaki, George T.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
156606, 156613, H01L 21365
Patent
active
046489177
ABSTRACT:
A layer of HgCdTe (15) is epitaxially grown onto a CdTe substrate (5). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated within a temperature range of between 500.degree. C. and 625.degree. C. for a processing step having a duration of between 5 minutes and 4 hours. During at least 5 minutes of this processing step, the substrate (5) is made to have a greater temperature than the source (3). Preferably the substrate (5) is never at a lower temperature than the source (3). The source (3) and substrate (5) are heated together in a thermally insulating, reusable ampoule (17). The CdTe substrate (5) is preferably a thin film epitaxially grown on a support (10) e.g., of sapphire or GaAs. When support (10) is not used, the CdTe substrate (5) is polished; and sublimation and solid state diffusion growth mechanisms are present in the growth of the HgCdTe (15). Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis and bulk CdTe wafer (5) polishing.
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Tufte et al., "Growth and Properties of Hg.sub.l-x Cd.sub.x Te Epitaxial Layers", J. Applied Phys., vol. 40, No. 11, pp. 4559-4568, (Oct. 1969).
Vohl et al., J. Electronic Materials, vol. 7, No. 5, pp. 659-678, (1978), "Vapor Phase Growth of Hg.sub.l-x CD.sub.x Te Epitaxial Layers".
Marfaing et al., "A New Process of Crystal Growth: Evaporation-Diffusion Under Isothermal Conditions", Proc. Int'l Conf. on Crystal Growth, Boston, MA, pp. 549-552, (Jun. 20-24 1966).
Bray Burton A.
Chan Hakchill
Ju Fred
Kay Robert E.
Ford Aerospace & Communications Corporation
Ozaki George T.
Pawlikowski Beverly A.
Radlo Edward J.
Zerschling Keith L.
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