Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-08-30
1993-10-26
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257249, 257435, H01L 2978, H01L 2714, H01L 3100
Patent
active
052568903
ABSTRACT:
A charge coupled device (CCD) of a frame interline transfer type comprises a plurality of picture elements aligned in the vertical direction. Rows of aligned picture elements are arranged parallel and adjacent to each other. Polysilicon electrodes extending in the horizontal direction are arranged on a substrate covered with an insulating layer and used as electrodes for vertical transfer of signal charges. Metal wiring films extending in the vertical direction are arranged parallel and traverse the polysilicon electrodes covered with the insulating layer. The metal wiring films are used as electrodes for applying a clock pulse for vertical transfer of signal charges to the polysilicon electrodes. First, second and third openings are formed through the insulating layer such that the metal wiring films may contact the first, second and third polysilicon electrodes, respectively.
REFERENCES:
patent: 3890633 (1971-04-01), Kosonocky
patent: 4689687 (1987-08-01), Koike et al.
Furukawa Jun-ichi
Kanbe Hideo
Hille Rolf
Limanek Robert
Sony Corporation
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