Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-04-14
1993-08-10
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257236, 257243, 257248, 257250, H01L 2978, H01L 2716, H01L 3100
Patent
active
052351980
ABSTRACT:
An interline transfer type area image sensor which operates in a non-interlaced mode and has an array of columns and rows of photoreceptor in which charge from each pixel is transferred into a stage of a vertical two-phase CCD shift register formed by adjacent electrodes of the CCD. Each electrode of a stage has a separate voltage clock. An ion implanted vertical transfer barrier region is formed under an edge of each electrode.
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Technical Digest, IEDM, 1988, pp. 70-73.
IEEE Electron Device Letters, vol. 10, No. 8, pp. 361-363, Aug. 1989.
J. Electrochemical Soc., vol. 135, p. 2640, Oct. 1988.
Losee David L.
Nelson Edward T.
Stevens Eric G.
Tredwell Timothy J.
Eastman Kodak Company
James Andrew J.
Ngo Ngan Van
Owens Raymond L.
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