Non-epitaxial static induction transistor processing

Details Non-epitaxial static induction transistor processing Non-epitaxial static induction transistor processing

1981-11-12

1983-09-27

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 148 15, 148187, 156 31, 156 32, 357 22, 357 91, H01L 2704, H01C 714

Patent

active

044060521

ABSTRACT:
A method for fabricating a static induction transistor starting with a high resistivity substrate on which a gate-source structure is formed. The gate-source structure is covered by a supporting layer and the wafer is etched to desired thickness. Ions are implanted in the etched surface and a drain electrode is deposited. A thick metal support layer and heat sink is electroplated on the drain electrode.

REFERENCES:
patent: 3828230 (1974-08-01), Nishizawa et al.
patent: 3846198 (1974-11-01), Wen et al.
patent: 3930912 (1976-01-01), Wisbey
patent: 4193836 (1980-03-01), Youmans et al.
patent: 4230505 (1980-10-01), Wu et al.
patent: 4292730 (1981-10-01), Ports
patent: 4317127 (1982-02-01), Nishizawa
Shino et al. Jap. Jour. Appl. Physics 19 (1980) Suppl. 19-1, pp. 283-287.

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