Non-destructive method for gauging undercut in a hidden layer

Details Non-destructive method for gauging undercut in a hidden layer Non-destructive method for gauging undercut in a hidden layer

1998-11-05

2000-02-29

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438739, H01L 2100

Patent

active

060309032

ABSTRACT:
A method for non-destructively determining the amount of undercutting in a hidden layer of material disposed on a substrate after device patterning by etching. The method involves forming at least two lines of etch resistant material of increasing width over the hidden layer of material of the substrate and inspecting the lines after etching for a given time period to determine how many lines have been removed. The width dimension of the largest removed line corresponds approximately to the amount of undercut for two sides in the hidden layer of material after etching for the given time period.

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patent: 5256577 (1993-10-01), Pluntke et al.
patent: 5264328 (1993-11-01), DellaGuardia et al.

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