Non-destructive method and apparatus for monitoring a selected s

Details Non-destructive method and apparatus for monitoring a selected s Non-destructive method and apparatus for monitoring a selected s

1997-01-30

1999-07-27

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324642, 324719, G01R 2702, G01N 2200

Patent

active

059296445

ABSTRACT:
A non-destructive and non-invasive method for monitoring a selected characteristic of a fabricated semiconductor sample while inside a fabrication chamber and during the fabrication process, where selected materials are deposited on a planar surface of a wafer substrate in a fabrication chamber, employs one or more viewports in the walls of the fabrication chamber. A focused electromagnetic wave is generated external to the fabrication chamber, and directed through a viewport to impinge upon a selected portion of the planar surface of the wafer substrate at an oblique incident angle relative to the planar surface of the wafer substrate. In turn, a reflected electromagnetic wave emanating from the planar surface of the wafer substrate is detected. A signal processor then determines a reflection coefficient as a function of a selected characteristic of the focused electromagnetic wave and the reflected electromagnetic wave.

REFERENCES:
patent: 4868490 (1989-09-01), Blumenthal
patent: 5103182 (1992-04-01), Moslehi
patent: 5384542 (1995-01-01), Lahitte et al.

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