Non-destructive measuring sensor for semiconductor wafer and met

Details Non-destructive measuring sensor for semiconductor wafer and met Non-destructive measuring sensor for semiconductor wafer and met

1993-12-21

1996-09-10

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324 96, 324117B, G01R 31308

Patent

active

055549390

ABSTRACT:
The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.

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