Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Using epitaxial lateral overgrowth
Reexamination Certificate
2007-12-20
2010-11-23
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Using epitaxial lateral overgrowth
C438S234000, C438S236000, C438S014000, C257SE21530, C257SE21529
Reexamination Certificate
active
07838376
ABSTRACT:
Integrated circuits using buried layers under epitaxial layers present a challenge in aligning patterns for surface components to the buried layers, because the epitaxial material over the buried layer diminishes the visibility of and shifts the apparent position of the buried layer. A method of measuring the lateral offset, known as the epi pattern shift, between a buried layer and a pattern for a surface component using planar processing technology and commonly used semiconductor fabrication metrology tools is disclosed. The disclosed method may be used on a pilot wafer to provide optimization data for a production line running production wafers, or may be used on production wafers directly. An integrated circuit fabricated using the instant invention is also disclosed.
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Anderson Amy E.
Welsh Lynn S.
Brady III Wade J.
Franz Warren L.
Ligai Maria
Pham Thanh V
Telecky , Jr. Frederick J.
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