Non-destructive energy beam activated conductive links

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 16, 437 19, 437 20, 437228, 437233, 437191, 437247, H01L 21265

Patent

active

048351180

ABSTRACT:
A process of manufacturing selectively restructurable conductive links between circuit elements and corresponding spare elements on a semiconductor. A continuous green light laser directed at a non-conductive amorphous region in the links causes the region to recrystallize. This makes the link electrically conductive thereby joining the circuit elements to a corresponding spare element on the semiconductor. The method permits for high density packing of circuit elements and creates a link without producing bulk material movement.

REFERENCES:
patent: 3564354 (1971-02-01), Aoki et al.
patent: 3653999 (1972-04-01), Fuller
patent: 4135292 (1979-01-01), Jaffe et al.
patent: 4174521 (1979-11-01), Neale
patent: 4240843 (1980-12-01), Celler et al.
patent: 4387503 (1983-06-01), Aswell et al.
patent: 4432008 (1984-02-01), Malthiel
patent: 4462150 (1984-07-01), Nishimura et al.
patent: 4476478 (1984-10-01), Noguchi et al.
patent: 4536949 (1985-08-01), Takayama et al.
patent: 4538344 (1985-09-01), Okumura et al.
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4602420 (1986-07-01), Saito
patent: 4651409 (1987-03-01), Ellsworth et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 3, (Aug. 1978), p. 1086.
M. Miyao et al., "Electron Irradiation-Activated Low-Temperature Annealing of Phosphorus-Implanted Silicon", Appl. Phys. Lett. 48(17), p. 1132, (Apr. 1986).
J. F. Gibbons, "Ion Implantation in Semiconductor-Part II: Damage Production and Annealing", Proceedings of the IEEE, vol. 60, No. 9, p. 1062, (Sep. 1972).
R. Chow et al., "Activation and Redistribution of Implanted P and B in Polycrystalline Si by Rapid Thermal Processing", Journal of Vacuum Science and Technology/A, vol. 3, No. 3, Part 1, p. 892, (May-Jun. 1985).
"Laser Polysilicon Link Making", Donald F. Parker, et al., Institute for Solid State Electronics, Dept. of Elec. Eng., Texas A & M University.
"A High-Speed Hi-CMOSII 4K Static RAM," Osamu Minato, et al., IEEE Journal of Solid State Circuits, vol. SC-16, No. 5, Oct. 1981, pp. 449-453.
"Low Resistance Laser Formed Lateral Links," J. A. Yasaitis, et al., III Electron Device Letters, vol. EDL-3, No. 7, Jul. 1982, pp. 184-186.
"Laser Induced Personalization & Alterations of LSI & VLSI Circuits," James F. Smith, et al., Proceedings of the First International Laser Processing Conf., Nov. 16-17, 1981, Anaheim, California, Laser Institute of America (no page numbers).
"Laser Programmes VIAS for Restructable VLSI," J. I. Raffel, et al., International Electron. Devices, Meeting, Technical Digest, 1980, pp. 132-135.
"Laser Linking Process for Restructurable VLSI," G. H. Chapman, et al., Conferences on Lasers and Electro-Optics, IEEE, New York, 1982.
"Connecting Conductors on Semiconductor Devices by Lasers,", Mikio Hongo, et al., Conference on Lasers and Electro-Optics, IEEE, New York, 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Non-destructive energy beam activated conductive links does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-destructive energy beam activated conductive links, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-destructive energy beam activated conductive links will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2152453

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.