Non-destructive, below-surface defect rendering using image...

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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Details

C382S147000, C382S149000, C356S237200, C348S126000, C430S506000, C250S306000, C250S310000, C250S311000

Reexamination Certificate

active

07835564

ABSTRACT:
Non-destructive, below-surface defect rendering of an IC chip using image intensity analysis is disclosed. One method includes providing an IC chip delayered to a selected layer; determining a defect location below a surface of the selected layer using a first image of the IC chip obtained using an CPIT in a first mode; generating a second image of the IC chip with the CPIT in a second mode, the second image representing charged particle signal from the defect below the surface of the selected layer; and rendering the defect by comparing an image intensity of a reference portion of the second image not including the defect with the image intensity of a defective portion of the second image including the defect, wherein the reference portion and the defective portion are of structures expected to be substantially identical.

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