Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-09-13
1995-08-08
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 67, 257365, 257 74, H01L 29786, H01L 2904
Patent
active
054401500
ABSTRACT:
A non-crystalline silicon--preferably a-Si:H--active device for use in a large-scale hardware implementation of an artificial neural network system having an analog and digital mixed morphology. A plurality of a-Si:H thin-film transistors (TFTs) implement addition, multiplication and weighting functionality and are arranged in a highly-connected morphology with other active and passive semiconductor elements. Electrical signals are selectively applied to metal plates and light-emitting devices in order to locally or globally alter the threshold characteristics of the TFTs.
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Burns Stanley G.
Weber Robert J.
Iowa State University & Research Foundation, Inc.
Jackson Jerome
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