Non-contact tunnelling field measurement for a semiconductor oxi

Details Non-contact tunnelling field measurement for a semiconductor oxi Non-contact tunnelling field measurement for a semiconductor oxi

1997-04-23

2000-08-01

Snow, Walter E.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

2504922, G01R 3126, G01R 3128

Patent

active

060971967

ABSTRACT:
A corona source is used to repetitively apply charge to an oxide layer on a semiconductor. A Kelvin probe is used to measure the resulting voltage across the layer. The tunneling field is determined based on the value of voltage at which the voltage measurement saturates.

REFERENCES:
patent: 4812756 (1989-03-01), Curtis et al.
patent: 5025145 (1991-06-01), Lagowski
patent: 5498974 (1996-03-01), Verkuil et al.
Outside Electrochemical Society Publication, 1985, Abstract No. 284, pp. 415-416.

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