Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2007-04-10
2007-04-10
Nguyen, Vinh (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
Reexamination Certificate
active
11191093
ABSTRACT:
A non-contact method is described for acquiring the accurate charge-voltage data on miniature test sites of semiconductor wafer wherein the test sites are smaller than 100 μm times 100 μm. The method includes recognizing the designated test site, properly aligning it, depositing a prescribed dose of ionic charge on the surface of the test site, and precise measuring of the resulting voltage change on the surface of the test site. The method further compromises measuring of the said voltage change in the dark and/or under strong illumination without interference from the laser beam employed in the Kelvin Force probe measurement of the voltage. The method enables acquiring of charge-voltage data without contacting the measured surface of the wafer and without contaminating the wafer. Thus, the measured wafer can be returned to IC fabrication line for further processing.
REFERENCES:
patent: 4812756 (1989-03-01), Curtis et al.
patent: 5498974 (1996-03-01), Verkuil et al.
patent: 5594247 (1997-01-01), Verkuil et al.
patent: 5644223 (1997-07-01), Verkuil
patent: 5644245 (1997-07-01), Saitoh et al.
patent: 6001299 (1999-12-01), Kawabe et al.
patent: 6037797 (2000-03-01), Lagowski et al.
patent: 6097196 (2000-08-01), Verkuil et al.
patent: 6202029 (2001-03-01), Verkuil et al.
patent: 6538462 (2003-03-01), Lagowski et al.
patent: 6597193 (2003-07-01), Lagowski et al.
patent: 6680621 (2004-01-01), Savtchouk et al.
patent: 6937050 (2005-08-01), Fung et al.
patent: 7075318 (2006-07-01), Zhang et al.
patent: 2004/0046585 (2004-03-01), Kamieniecki et al.
Verkuil, “Contactless Alternatives to MOS Charge Measurements”, Electrochem. Soc. Abst., #525, pp. 1312-1315, (no date).
Piotr Edelman, et al., Non-Contact C-V Technique for High-K Applications, 2003, pp. 160-165.
Piotr, Edelman, et al., Full Wafer Non-Contact Mapping of Electrical Properties of Ultra-Thin Advanced Dielectrics on Si, 2002, pp. 211-215.
D.K. Schroder, et al., Corona-Oxide-Semiconductor Device Characterization, 1998, pp. 505-512.
Dieter K. Schroder, Contactless Surface Charge Semiconductor Characterization, 2002, pp. 196-210.
D. Marinskiy, P. Edelman, et al., Self-Calibrating Approach for Non-Contact Electrical Doping Profiling, 2005, pp. 249-253.
Almeida Carlos
Edelman Piotr
Kochey Joseph Nicholas
Lagowski Jacek
Marinskiy Dmitriy
Isla-Rodas Richard
Nguyen Vinh
Semiconductor Diagnostics, Inc.
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