Non-contact electro-optic detection of photovoltages created in

Details Non-contact electro-optic detection of photovoltages created in Non-contact electro-optic detection of photovoltages created in

1996-09-23

1998-05-12

Westin, Edward P.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

324752, 324753, 349199, G01R 31308

Patent

active

057509816

ABSTRACT:
An electro-optic detector senses induced photovoltages in a semiconductor structure through use of an electro-optic sensing material. The sensing material is closely positioned to the surface of a semiconductor structure so as to be locally affected by electric field changes which occur as a result of induced photovoltages. An interrogating optical beam is directed at the semiconductor structure so as to induce locally positioned photovoltages at a surface thereof. An optical sensing beam is directed at the electro-optic sensing material and a detector senses reflections of the optical sensing beam from the electro-optic layer both in regions affected by the local photovoltage field changes and in regions not affected by the local photovoltage field changes. Characteristics of the semiconductor structure are deduced from reflection data derived from the optical sensing beam.

REFERENCES:
patent: 4703260 (1987-10-01), Beha et al.
patent: 5030909 (1991-07-01), Blancha et al.
patent: 5177351 (1993-01-01), Lagowski
patent: 5311137 (1994-05-01), Chang et al.
Semicond. Sci. Technology, 7 (1992) A185-A192, pp. 10-17, "Non-contact Mapping of Heavy Metal Contamination for Silicon IC Fabrication", J. Lagowski et al.

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