Non-ambipolar radio-frequency plasma electron source and...

Details Non-ambipolar radio-frequency plasma electron source and... Non-ambipolar radio-frequency plasma electron source and...

2011-01-25

2011-01-25

Souw, Bernard E (Department: 2881)

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

C250S382000, C250S385100, C250S387000, C315S111310, C315S111210, C313S231310, C313S363100

Reexamination Certificate

active

07875867

ABSTRACT:
An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

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