Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1993-06-11
1995-08-22
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257700, 257724, 257660, H01L 2312, H01L 2352, H01L 25065
Patent
active
054442974
ABSTRACT:
In a circuit board having four-layered conductive pattern on which a control circuit is arranged, wiring sub-patterns 133a in the first layer are divided into four areas A1-A3 and A8, for respective sets of circuit parts having same power potentials. Respective sub-patterns belonging to the areas A1-A3 are partially or fully surrounded by wiring sub-patterns PEa1 PEa3 connected to negative power potentials of circuit parts belonging to respective areas, respectively. Similarly, at least part of a wiring patten Pa2 for transmitting an input signal to a semiconductor active element is surrounded by a wiring pattern PEa4. Penetration of electric noises to the wiring patterns for the control circuit, in particular to the wiring pattern for transmitting the input signal to semiconductor element, is decreased to thereby prevent misoperation due to electric noises.
REFERENCES:
patent: 4965710 (1990-10-01), Pelly et al.
patent: 5043526 (1991-08-01), Nakagawa et al.
patent: 5077595 (1991-12-01), Fukunaga
patent: 5241456 (1993-08-01), Marcinkiewicz et al.
Patent Abstracts of Japan, vol. 14, No. 239, (E-930), May 21, 1990, J P Kokai #02-065240, Mar. 5, 1990.
Shinohe et al, "Isolation Structure Optimization for High Power Reverse Conducting GTO", 1988 IEEE PESC '88 Record, Apr. 1988 pp. 908-914.
Oshima Seiichi
Takanashi Ken
Tametani Fumitaka
Yamagata Jun
Brown Peter Toby
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Noise resistant semiconductor power module does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Noise resistant semiconductor power module, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Noise resistant semiconductor power module will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2143658