Noise reduction technique for breakdown diodes

Details Noise reduction technique for breakdown diodes Noise reduction technique for breakdown diodes

1990-12-24

1991-10-15

Mintel, William

357 2313, 357 238, 357 41, 357 43, 357 7, H01L 2990

Patent

active

050578790

ABSTRACT:
A device including a first semiconductor PN junction which is reverse biased to operate in the avalanche breakdown region. A second semiconductor PN junction is biased to operate in the forward active region such that carriers are injected through the second semiconductor PN junction and diffuse to the first semiconductor PN junction wherein the noise generated from the first semiconductor PN junction operating in the avalanche breakdown region is substantially reduced.

REFERENCES:
patent: 4189739 (1980-02-01), Copeland, III
patent: 4322767 (1982-03-01), El Hamamsy et al.
patent: 4626882 (1986-12-01), Cottrell et al.
patent: 4847724 (1989-07-01), Renous
patent: 5012317 (1991-04-01), Rountre

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