Noble metal diffusion doping of mercury cadmium telluride for us

Details Noble metal diffusion doping of mercury cadmium telluride for us Noble metal diffusion doping of mercury cadmium telluride for us

1996-12-31

1998-09-08

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438559, 438455, 438518, H01L 3118

Patent

active

058044639

ABSTRACT:
A P-type substrate for infrared photo diodes can be produced by the present invention. A CdZnTe substrate is utilized. A first layer of HgCdTe is formed by liquid phase epitaxy on the substrate. A CdTe passivation layer is formed over the HgCdTe. A ZnS layer is formed over the CdTe layer. A noble metal is introduced into either the CdTe or ZnS layers. During a subsequent baking of the composite, the noble metal diffuses throughout the composite and into the HgCdTe layer.

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