Nitrogenated carbon electrode for chalcogenide device and...

Details Nitrogenated carbon electrode for chalcogenide device and... Nitrogenated carbon electrode for chalcogenide device and...

2011-05-17

2011-05-17

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S295000

Reexamination Certificate

active

07943922

ABSTRACT:
A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.

REFERENCES:
patent: 5536947 (1996-07-01), Klersy et al.

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