Nitrogen treatment for metal-silicide contact

Details Nitrogen treatment for metal-silicide contact Nitrogen treatment for metal-silicide contact

1995-02-24

1996-08-13

Pourson, George

Fishing, trapping, and vermin destroying

437192, H01L 2128

Patent

active

055455921

ABSTRACT:
A low-resistance contact for use in integrated circuits is formed by creating a titanium silicide layer on a semiconductor body and treating the titanium silicide layer with active free nitrogen to form a surface comprised of titanium nitride. This titanium nitride surface is then overlaid with an additional deposition of titanium nitride. Finally, a layer of conductive metal, such as tungsten, is formed over the second titanium nitride layer by chemical vapor deposition. This process eliminates the need for a titanium-metal deposition step and the defects associated with potential reactions between tungsten hexafluoride gas and titanium metal.

REFERENCES:
patent: 4851369 (1989-07-01), Ellwanger et al.
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5242860 (1993-09-01), Nulmon et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
Kuan-Yu Fu et al, "On the Failure Mechanisms of Titanium Nitride/Titanium Silicide Barrier Contacts under High Current Stress," IEEE Transaction on Electron Devices, Dec. 1988, vol. 35, No. 12, pp. 2151-2159.
S.W. Sun et al., "A1/W/TiN.sub.x /TiSi.sub.y /Si Barrier Technolgy for 1.0-.mu.m Contacts," IEEE Electron Device Letters, Feb. 1988, vol. 9, No. 2, pp. 71-73.

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