Nitrogen sources for molecular beam epitaxy

Details Nitrogen sources for molecular beam epitaxy Nitrogen sources for molecular beam epitaxy

2007-08-14

2007-08-14

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S092000, C117S103000, C438S046000, C438S057000, C438S604000

Reexamination Certificate

active

10233625

ABSTRACT:
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.

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