Nitrogen rich barrier layers and methods of fabrication thereof

Details Nitrogen rich barrier layers and methods of fabrication thereof Nitrogen rich barrier layers and methods of fabrication thereof

2011-03-01

2011-03-01

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Beam leads

C438S652000, C438S627000, C438S643000, C438S656000, C257SE29158

Reexamination Certificate

active

07898082

ABSTRACT:
A semiconductor device includes a material layer and a first barrier layer disposed over the material layer. The first barrier layer includes a nitrogen-rich region formed at a top surface of the first barrier layer. A conductor is disposed over the first barrier layer such that the first barrier layer and the nitrogen-rich region form a barrier layer between the material layer and the conductor.

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patent: 2003/0194859 (2003-10-01), Huang
patent: 2006/0105565 (2006-05-01), Liu et al.

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