Nitrogen polar III-nitride heterojunction JFET

Details Nitrogen polar III-nitride heterojunction JFET Nitrogen polar III-nitride heterojunction JFET

2007-01-03

2010-06-01

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257SE29246, C257SE29253

Reexamination Certificate

active

07728355

ABSTRACT:
An N-polar III-nitride heterojunction JFET which includes a P-type III-nitride body under the gate electrode thereof.

REFERENCES:
patent: 5929467 (1999-07-01), Kawai et al.
patent: 7002179 (2006-02-01), Nakahara
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0102482 (2003-06-01), Saxler
patent: 2005/0189559 (2005-09-01), Saito et al.
patent: 2009/0085065 (2009-04-01), Mishra et al.

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