Nitrogen passivation of interface states in SiO 2 /SiC...

Details Nitrogen passivation of interface states in SiO 2 /SiC... Nitrogen passivation of interface states in SiO 2 /SiC...

2006-04-04

2006-04-04

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255394, C427S397700, C438S787000

Reexamination Certificate

active

07022378

ABSTRACT:
A nitrided oxide layer on a silicon carbide layer is processed by annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient. The anneal may be carried out at a temperature of greater than about 900° C., for example, a temperature of about 1100° C., a temperature of about 1200° C. or a temperature of about 1300° C. Annealing the nitrided oxide layer may be carried out at a pressure of less than about 1 atmosphere, for example, at a pressure of from about 0.01 to about 1 atm or, in particular, at a pressure of about 0.2 atm. The nitrided oxide layer may be an oxide layer that is grown in a N2O and/or NO containing ambient, that is annealed in a N2O and/or NO containing ambient or that is grown and annealed in a N2O and/or NO containing ambient.

REFERENCES:
patent: 3924024 (1975-12-01), Naber et al.
patent: 4466172 (1984-08-01), Batra
patent: 4875083 (1989-10-01), Palmour
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5170455 (1992-12-01), Goossen et al.
patent: 5184199 (1993-02-01), Fujii et al.
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5506421 (1996-04-01), Palmour
patent: 5510630 (1996-04-01), Agarwal et al.
patent: 5587870 (1996-12-01), Anderson et al.
patent: 5726463 (1998-03-01), Brown et al.
patent: 5739564 (1998-04-01), Kosa et al.
patent: 5763905 (1998-06-01), Harris
patent: 5837572 (1998-11-01), Gardner et al.
patent: 5877045 (1999-03-01), Kapoor
patent: 5885870 (1999-03-01), Maiti et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 5960289 (1999-09-01), Tsui et al.
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 6025608 (2000-02-01), Harris et al.
patent: 6028012 (2000-02-01), Wang
patent: 6048766 (2000-04-01), Gardner et al.
patent: 6054352 (2000-04-01), Ueno
patent: 6063698 (2000-05-01), Tseng et al.
patent: 6096607 (2000-08-01), Ueno
patent: 6100169 (2000-08-01), Suvorov et al.
patent: 6107142 (2000-08-01), Suvorov et al.
patent: 6117735 (2000-09-01), Ueno
patent: 6136728 (2000-10-01), Wang
patent: 6165822 (2000-12-01), Okuno et al.
patent: 6190973 (2001-02-01), Berg et al.
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6221700 (2001-04-01), Okuno et al.
patent: 6228720 (2001-05-01), Kitabatake et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6297172 (2001-10-01), Kashiwagi
patent: 6316791 (2001-11-01), Schorner et al.
patent: 6342748 (2002-01-01), Nakamura et al.
patent: 6344663 (2002-02-01), Slater, Jr. et al.
patent: 6455892 (2002-09-01), Okuno et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6610366 (2003-08-01), Lipkin
patent: 6767843 (2004-07-01), Lipkin et al.
patent: 2001/0055852 (2001-12-01), Moise et al.
patent: 2002/0030191 (2002-03-01), Das et al.
patent: 2002/0038891 (2002-04-01), Ryu et al.
patent: 2002/0072247 (2002-06-01), Lipkin et al.
patent: 2002/0102358 (2002-08-01), Das et al.
patent: 2004/0101625 (2004-05-01), Das et al.
patent: 198 09 554 (1998-09-01), None
patent: 19900171 (2000-12-01), None
patent: 10036208 (2002-02-01), None
patent: 0 637 069 (1995-02-01), None
patent: 0 637 069 (2001-01-01), None
patent: 03157974 (1991-07-01), None
patent: 08264766 (1996-10-01), None
patent: 09205202 (1997-08-01), None
patent: 11191559 (1999-07-01), None
patent: 11238742 (1999-08-01), None
patent: 11261061 (1999-09-01), None
patent: 11266017 (1999-09-01), None
patent: 11274487 (1999-10-01), None
patent: 2000049167 (2000-02-01), None
patent: 2000082812 (2000-03-01), None
patent: 2000-252461 (2000-09-01), None
patent: 02000252461 (2000-09-01), None
patent: 2000106371 (2001-04-01), None
patent: WO 97/17730 (1997-05-01), None
patent: WO 97/39485 (1997-10-01), None
patent: WO 98/02924 (1999-01-01), None
patent: WO 99/63591 (1999-12-01), None
patent: WO 00/13236 (2002-03-01), None
patent: WO02/084727 (2002-10-01), None
Chung et al., Applied Physics Letters, vol. 77, No. 22, Nov. 27, 2000, pp. 3601-3603.
Xu et al. IEEE Electron Device Letters, vol. 21, No. 6, Jun. 2000, pp. 298-300.
Wang et al. “The Efects of NH3Plasma Passivation on Ploysilicon Thin-film Transistors,”IEEE Electron Devices.vol. 16, No. 11, Nov. 1995.
International Search Report issued Apr. 14, 2004 for PCT/US03/26605.
Agarwal et al. “1.1 kV 4H-SiC Power UMOSFET's,”IEEE Electron Device Letters,vol. 18, No. 12, Dec. 1997, pp. 586-588.
Agarwal et al. “1400 V 4H-SiC Power MOSFET's,” Materials Science Forum vols. 264-268, pp. 989-992, 1998.
Agarwal et al. “Investigation of Lateral RESURF, 6H-SiC MOSFETs,”Materials Science Forum,vols. 338-342, (2000) pp. 1307-1310.
Bhatnagar et al. “Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices,”IEEE Transactions on Electron Devices,vol. 40, No. 3, Mar. 1993, pp. 645-655.
Casady et al. “900 V DMOS and 1100 V UMOS 4H-SiC Power FETs,”IEEE Device Research Conference,Ft. Collins, CO Jun. 23-25, 1997.
Schörner et al. “Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800 V,”Materials Science Forum,vols. 338-342, (2000) pp. 1295-1298.
Shenoy et al. “High-Voltage Double-Implanted Power MOSFET's in 6H-SiC,”IEEE Electron Device Letters,vol. 18, No. 3, Mar. 1997, pp. 93-95.
Shenoy et al. “The Planar 6H-SiC ACCUFET: A New High-Voltage Power MOSFET Structure,”IEEE Electron Device Letters,vol. 18, No. 12, pp. 589-591, Dec. 1997.
Singh et al. “High Temperature, High Current, 4H-SiC Accu-DMOSFET,” Materials Science Forum vols. 338-342, (2000) pp. 1271-1274.
Suvorov et al. “4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs,”Materials Science Forum,vols. 338-342 (2000), pp. 1275-1278.
Tan et al. “High-Voltage Accumulation-Layer UMOSFETs in 4H-SiC,”IEEE Electron Device Letters,vol. 19, No. 12, Dec. 1998, pp. 487-489.
Vathulya et al. “Characterization of Channel Mobility on Implanted SiC to Determine Polytype Suitability for the Power DIMOS Structure,”Electronic Materials Conference,Santa Barbara, CA, Jun. 30-Jul. 2, 1999.
Wang et al. “Accumulation-Mode SiC Power MOSFET Design Issues,”Materials Science Forum,vols. 338-342, pp. 1287-1290.
M. K. Das, L.A. Lipkin, J.W. Palmour, G.Y. Chung, J.R. Williams, K. McDonald, and L.C. Feldman, “High Mobility 4H-SiC Inversion Mode MOSFETs Using Thermally Grown, NO Annealed SiO2,”IEEE Device Research Conference,Denver, CO Jun. 19-21, 2000.
Xu et al. “Improved Performance and Reliability of N2O-Grown Oxynitride on 6H-SiH,”IEEE Electron Device Letters,vol. 21, No. 6, Jun. 2000, p. 298-300.
G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, and J.W. Palmour, “Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide,”IEEE Electron Device Letters,vol. 22, No. 4, Apr. 2001.
G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, M. Di Ventra, S.T. Pantelides, L.C. Feldman, and R.A. Weller, “Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide,”Applied Physics Letters,vol. 76, No. 13, pp. 1713-1715, Mar. 2000.
L.A. Lipkin and J.W. Palmour, “Low interface state density oxides on p-type SiC,” Materials Science Forum vols. 264-268, pp. 853-856, 1998.
Baliga, Power Semiconductor Devices, Chapter 7, PWS Publishing, 1996.
U.S. Provisional Appl. No. 60/435,212.
U.S. Provisional Appl. No. 60/294,307.
U.S. Appl. No. 10/422,130.
Chakraborty et al. “Interface Properties of N2O-annealed SiO2/SiC system,”Proceedings IEEE Hong Kong Electron Devices Meeting.Jun. 24, 2000, pp. 108-111.
Lipkin et al. “Insulator Investigation on SiC for Improved Reliability,”IEEE Transactions on Electron Devices.vol. 46, No. 3, Mar. 1999, pp. 525-532.
Mutin, P. Herbert, “Control of the Composition and Structure of Silicon Oxycarbi

Affiliated with

Also associated with

Rating

Nitrogen passivation of interface states in SiO 2 /SiC... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitrogen passivation of interface states in SiO 2 /SiC..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitrogen passivation of interface states in SiO 2 /SiC... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3565560