Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2008-07-29
2008-07-29
Hiteshew, Felisa (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S019000, C117S937000
Reexamination Certificate
active
11623142
ABSTRACT:
The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.
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Aoshima Takaaki
Banan Mohsen
Haga Hiroyo
Armstrong Teasdale LLP
Hiteshew Felisa
MEMC Electronic Materials , Inc.
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