Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-02-27
2007-02-27
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S019000, C117S021000
Reexamination Certificate
active
10380806
ABSTRACT:
A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.
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Aoshima Takaaki
Banan Mohsen
Haga Hiroyo
Hiteshew Felisa
MEMC Electronic Materials , Inc.
Senniger Powers
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