Nitrogen controlled growth of dislocation loop in stress...

Details Nitrogen controlled growth of dislocation loop in stress... Nitrogen controlled growth of dislocation loop in stress...

2007-03-06

2007-03-06

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

C257S617000, C257S611000, C257S612000, C257S607000, C257S065000, C257SE21334

Reexamination Certificate

active

10918802

ABSTRACT:
Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

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