Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2008-01-29
2008-01-29
Lebentritt, Michael (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C257SE21008
Reexamination Certificate
active
11602150
ABSTRACT:
Valve metal material, including a valve metal, a nitride layer located on the valve metal, and an oxide layer located on the nitride layer is described. Methods of forming such a valve metal material are also described. The method includes forming an oxide layer onto the valve metal and then forming a nitride layer between the oxide layer and the valve metal.
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Cabot Corporation
Lebentritt Michael
Lee Kyoung
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