Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2008-01-29
2008-01-29
Lebentritt, Michael (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C257SE21008
Reexamination Certificate
active
07323017
ABSTRACT:
Valve metal material, including a valve metal, a nitride layer located on the valve metal, and an oxide layer located on the nitride layer is described. Methods of forming such a valve metal material are also described. The method includes forming an oxide layer onto the valve metal and then forming a nitride layer between the oxide layer and the valve metal.
REFERENCES:
patent: 4517727 (1985-05-01), Shimizu et al.
patent: 5911857 (1999-06-01), Kim
patent: 6051044 (2000-04-01), Fife
patent: 6075691 (2000-06-01), Duenas et al.
patent: 6105374 (2000-08-01), Kamody
patent: 6258653 (2001-07-01), Chew et al.
patent: 6268620 (2001-07-01), Ouellet et al.
patent: 6375704 (2002-04-01), Habecker et al.
patent: 6400556 (2002-06-01), Masuda et al.
patent: 6420043 (2002-07-01), Fife et al.
patent: 6479012 (2002-11-01), Rao
patent: 6515846 (2003-02-01), Tripp
patent: 6529367 (2003-03-01), Naito et al.
patent: 6545858 (2003-04-01), Naito et al.
patent: 6576038 (2003-06-01), Rao
patent: 2004/0028922 (2004-02-01), Reichert et al.
patent: 5-13282 (1993-01-01), None
patent: 10-130759 (1998-05-01), None
International Search Report and Written Opinion for PCT/US2004/024144 dated Dec. 3, 2004.
Northeast Coating Technologies, www.northeastcoating.com/PlasmaNitriding—1.htm.
Northeast Coating Technologies, www.northeastcoating.com/PlasmaProcess—1.htm.
Northeast Coating Technologies, www.northeastcoating.com/PlasmavsGas—1.htm.
Northeast Coating Technologies, www.northeastcoating.com/PlasmaEng—1.htm.
Gill, “Glossary of terms used in the tantalum industry,” AVX Technical Information, www.avxcorp.com, no date.
Gill, “Basic tantalum capacitor technology,” AVX Technical Information, www.avxcorp.com, no date.
Cabot Corporation
Lebentritt Michael
Lee Kyoung
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