Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-02-15
2011-02-15
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S102000, C257S103000, C257SE33013
Reexamination Certificate
active
07888669
ABSTRACT:
A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.
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Doolittle William Alan
Namkoong Gon
Georgia Tech Research Corporation
Pert Evan
Schneider, Esq. Ryan A.
Troutman Sanders LLP
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