Nitride-type compound semiconductor laser device and laser...

Details Nitride-type compound semiconductor laser device and laser... Nitride-type compound semiconductor laser device and laser...

2005-01-11

2005-01-11

Leung, Quyen (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

06842470

ABSTRACT:
A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

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