Nitride system semiconductor device with oxygen

Details Nitride system semiconductor device with oxygen Nitride system semiconductor device with oxygen

1997-09-05

1999-08-03

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257102, 257103, 372 43, 372 44, 372 45, H01L 3300

Patent

active

059328967

ABSTRACT:
The present invention provides a nitride system semiconductor device which decreases cost and improves productivity without heat treatment after the growth and which increases in lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0<m, 0.ltoreq.n, 0<m+n.ltoreq.1) layer, a p-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0<m, 0.ltoreq.n, 0<m+n.ltoreq.1) layer, and an electrode 22 formed on a substrate. The oxygen concentration of the surface of the p-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n layer is 5.times.10.sup.18 cm.sup.-3 or lower.

REFERENCES:
patent: 5617438 (1997-04-01), Hatano et al.

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