Nitride single crystal and producing method thereof

Details Nitride single crystal and producing method thereof Nitride single crystal and producing method thereof

2007-11-13

2007-11-13

Wilczewski, M. (Department: 2822)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S079000, C117S952000, C148SDIG011

Reexamination Certificate

active

10866007

ABSTRACT:
A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport medium layer to grow a nitride single crystal on the seed crystal. The material transport medium layer contains the compound of rare earth element and at least one compound selected from a group of aluminum compound, alkaline earth compound and transition metal compound. With this producing method, a large nitride single crystal having a crystal size of at least 10 mm is obtained.

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