Nitride semiconductor with active layer of quantum well...

Details Nitride semiconductor with active layer of quantum well... Nitride semiconductor with active layer of quantum well...

2007-01-23

2007-01-23

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S011000, C257S012000, C257S013000, C257S014000, C257S022000, C257S094000, C257S101000, C257S102000, C257S201000

Reexamination Certificate

active

10718652

ABSTRACT:
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

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