Nitride semiconductor wafer

Details Nitride semiconductor wafer Nitride semiconductor wafer

2011-01-18

2011-01-18

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S496000, C257S613000, C257S615000, C257S798000, C257SE21085, C257SE21214, C257SE21222, C257SE21237, C257SE21239

Reexamination Certificate

active

07872331

ABSTRACT:
A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

REFERENCES:
patent: 4004949 (1977-01-01), Lesk
patent: 7256148 (2007-08-01), Kastenmeier et al.
patent: 7460211 (2008-12-01), Whitefield et al.
patent: 7485928 (2009-02-01), Falster et al.
patent: 7579044 (2009-08-01), Brand et al.
patent: 7704126 (2010-04-01), Mattes et al.
patent: 2002/0160610 (2002-10-01), Arai et al.
patent: 2004/0035448 (2004-02-01), Aegerter et al.
patent: 2004/0041143 (2004-03-01), Kim et al.
patent: 2004/0214432 (2004-10-01), Masumoto
patent: 2009/0218659 (2009-09-01), Nakayama et al.
patent: 4033683 (1991-06-01), None
patent: 63-144966 (1988-06-01), None
patent: 9-168947 (1997-06-01), None
patent: 63-150158 (1998-06-01), None
patent: 2000-265160 (2000-09-01), None
patent: 2001-138244 (2001-05-01), None
patent: 2002-264021 (2002-09-01), None
patent: 2002-355763 (2002-12-01), None
patent: 2003-510418 (2003-05-01), None
patent: 2004-158537 (2004-06-01), None
patent: 2004-209580 (2004-07-01), None
patent: 2004-258643 (2004-12-01), None
patent: 2005-136167 (2005-05-01), None
patent: 2005-136311 (2005-05-01), None
patent: 2005-199407 (2005-07-01), None
patent: 2005-302804 (2005-10-01), None
patent: 2006-43884 (2006-02-01), None
patent: 2006-203058 (2006-08-01), None
patent: 2006-326795 (2006-12-01), None
patent: 2007-7844 (2007-01-01), None
patent: 2007-42748 (2007-02-01), None
patent: 2007103682 (2007-04-01), None
patent: 2007-517675 (2007-07-01), None
patent: 2007-223004 (2007-09-01), None
patent: 2007-254258 (2007-10-01), None
patent: 2007-305644 (2007-11-01), None
patent: 2008-28259 (2008-02-01), None
patent: 01/23323 (2001-04-01), None
patent: 2005/011007 (2005-02-01), None
patent: 2007/018074 (2007-02-01), None

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