Nitride semiconductor ultraviolet LEDs with tunnel junctions...

Details Nitride semiconductor ultraviolet LEDs with tunnel junctions... Nitride semiconductor ultraviolet LEDs with tunnel junctions...

2011-01-18

2011-01-18

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257SE21002, C257SE33066, C438S029000, C438S294000

Reexamination Certificate

active

07872272

ABSTRACT:
A structure and method for improving UV LED efficiency is described. The structure utilizes a tunnel junction to separate a P-doped layer of the LED from a n-doped contact layer. The n-doped contact layer allows the use of a highly reflective, low work function metal, such as aluminum, for the p-side contact. The reflectivity at the contact can be further improved by including a phase matching layer in some areas between the contact metal (The metal above the phase matching layer does not necessarily need to have a low work function because it does need to form an ohmic contact with the n-contact layer) and the n-doped contact layer.

REFERENCES:
patent: 6618413 (2003-09-01), Bour et al.
patent: 7078735 (2006-07-01), Shono et al.
patent: 7119372 (2006-10-01), Stokes et al.
patent: 7714340 (2010-05-01), Chua et al.
patent: 2007/0012937 (2007-01-01), Liu et al.
patent: 2010/0207096 (2010-08-01), Tang et al.

Affiliated with

Also associated with

Rating

Nitride semiconductor ultraviolet LEDs with tunnel junctions... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor ultraviolet LEDs with tunnel junctions..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor ultraviolet LEDs with tunnel junctions... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2631945