Nitride semiconductor thin film having fewer defects and...

Details Nitride semiconductor thin film having fewer defects and... Nitride semiconductor thin film having fewer defects and...

2007-04-03

2007-04-03

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S481000, C257S615000, C257SE33025, C117S952000

Reexamination Certificate

active

11023540

ABSTRACT:
The present invention relates to a nitride semiconductor thin film having less defects and a method of growing the same. According to the present invention, the nitride semiconductor thin film with lower defect density can be manufactured by forming grooves on a substrate, sequentially forming a buffer layer and a first nitride semiconductor thin film on a whole surface of the substrate, etching higher defect density regions of the first nitride semiconductor thin film, and then laterally growing a second nitride semiconductor thin film. Thus, a highly crystalline nitride semiconductor thin film can be obtained. Therefore, there are advantages in that high-efficiency, high-power and high-reliability optical devices or electronic devices can be manufactured and high throughput can also be obtained by using the obtained nitride semiconductor thin film.

REFERENCES:
patent: 2001/0008791 (2001-07-01), Gehrke et al.

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