Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-10-17
2006-10-17
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000
Reexamination Certificate
active
07122847
ABSTRACT:
The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.
REFERENCES:
patent: 2004/0113166 (2004-06-01), Tadatomo et al.
Fleshner & Kim LLP
LG Electronics Inc.
Nguyen Cuong
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