Nitride semiconductor substrate and method of producing same

Details Nitride semiconductor substrate and method of producing same Nitride semiconductor substrate and method of producing same

2006-12-26

2006-12-26

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S200000, C257S201000, C257S615000

Reexamination Certificate

active

07154131

ABSTRACT:
A nitride semiconductor substrate having a rugged surface being lapped by whetting granules to roughness between Rms5 nm and Rms200 nm, which has a function of reducing dislocations of a GaN, InGaN or AlGaN layer epitaxially grown on the lapped substrate by gathering dislocations in the epi-layer to boundaries of holes, pulling the dislocations to bottoms of the holes. Higher roughness of the nitride substrate degrades morphology of an epitaxially-grown layer thereon but reduces dislocation density to a lower level. Morphology of the epi-layer contradicts the dislocation density of the epi-layer. The nitride semiconductor substrate can reduce dislocation density and can be low cost and useful substrates.

REFERENCES:
patent: 6468347 (2002-10-01), Motoki et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 10-256662 (1998-09-01), None
patent: 2000-012900 (2000-01-01), None
patent: 2001-102307 (2001-04-01), None
Tavernier et al., “Chemical Mechanical Polishing of Gallium Nitride”, Electrochemical and Solid-State Letters, 5(8) G61-G64, May 2002.
Ishida, M., et al. “Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure.” Journal of Crystal Growth, vol. 221, (2000), pp. 345-349.

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