Nitride semiconductor substrate

Details Nitride semiconductor substrate Nitride semiconductor substrate

2011-07-26

2011-07-26

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S615000, C257SE29089, C257SE21237, C257SE23179

Reexamination Certificate

active

07986030

ABSTRACT:
A nitride semiconductor substrate has a first surface forming a principal surface of the substrate. A first edge is formed by beveling at least a portion of an edge of the first surface of the substrate. A scattering region is formed in at least a portion of the first edge. The scattering region scatters more external incident light than the first surface.

REFERENCES:
patent: 5187118 (1993-02-01), Ohmori et al.
patent: 6998700 (2006-02-01), Toba et al.
patent: 7195545 (2007-03-01), Nakayama et al.
patent: 2004/0129940 (2004-07-01), Iwase et al.
patent: 2004/0195658 (2004-10-01), Nakayama et al.
patent: 2006/0194520 (2006-08-01), Nakayama et al.
patent: 2010/0270649 (2010-10-01), Ishibashi et al.
patent: 2004-319951 (2004-11-01), None

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