Nitride semiconductor single crystal substrate, and methods...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis

Reexamination Certificate

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C257S101000, C257S103000, C257SE21090, C257SE21461, C257SE33028

Reexamination Certificate

active

07859086

ABSTRACT:
A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

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Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2007-069541, dated May 18, 2010.

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