Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2007-03-16
2010-12-28
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S101000, C257S103000, C257SE21090, C257SE21461, C257SE33028
Reexamination Certificate
active
07859086
ABSTRACT:
A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
REFERENCES:
patent: 5059545 (1991-10-01), Frensley et al.
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6320207 (2001-11-01), Furukawa et al.
patent: 6455877 (2002-09-01), Ogawa et al.
patent: 6586777 (2003-07-01), Yuasa et al.
patent: 7105857 (2006-09-01), Nagahama et al.
patent: 7442569 (2008-10-01), Lee et al.
patent: 7504274 (2009-03-01), Chakraborty et al.
patent: 7649194 (2010-01-01), Yoshida
patent: 2005/0184299 (2005-08-01), Matsumura et al.
patent: 2006/0186397 (2006-08-01), Ghyselen et al.
patent: 2006/0257626 (2006-11-01), Schlesser et al.
patent: 2007/0141814 (2007-06-01), Leibiger et al.
patent: 2008/0073652 (2008-03-01), Sugimoto et al.
patent: 2008/0128706 (2008-06-01), Fujiwara et al.
patent: 2008/0311393 (2008-12-01), Dwilinski et al.
patent: 2009/0039373 (2009-02-01), Saito et al.
patent: 2009/0101935 (2009-04-01), Sugawara
patent: 2009/0155987 (2009-06-01), Lee
patent: 10-229218 (1998-08-01), None
patent: 11-340571 (1999-12-01), None
patent: 2001-148533 (2001-05-01), None
patent: 2005-268769 (2005-05-01), None
patent: 2007-070154 (2007-03-01), None
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2007-069541, dated May 18, 2010.
Kim Cheol Kyu
Kim Tae Hyung
Lee Soo Min
Ryu Yung Ho
Yang Jong In
Andújar Leonardo
Arroyo Teresa M.
McDermott Will & Emery LLP
Samsung LED Co., Ltd.
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